| PART |
Description |
Maker |
| 1SV324 |
DIODE SILCON EPITAXIAL PLANAR TYPE
|
Toshiba Semiconductor
|
| BDX63A BDX63C BDX63 BDX63B |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BD795 BD798 BD796 BD801 BD802 BD800 BD799 BD797 |
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84%
EPITAXIAL-BASE/SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
INTERSIL[Intersil Corporation]
|
| 2316226 |
End cover for FB-PS-BASE/EX base. Use in power and indicator bus at each end base.
|
PHOENIX CONTACT
|
| BD201 BD202 BD203 |
Epitaxial-Base, Silicon
|
New Jersey Semi-Conduct...
|
| 2N3713-12 |
EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
| BDX20 |
PNP SILICON TRANSISTORS EPITAXIAL BASE
|
List of Unclassifed Manufacturers
ETC
Comset Semiconductors
|
| 2N6106 2N6291 |
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corporation
|
| 2N3789 |
(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| 2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V.
|
General Electric Solid State
|
